发明名称 VACUUM DEPOSITION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a vacuum deposition device which can reduce working time of film deposition without deteriorating the quality of the film deposition. SOLUTION: This vacuum deposition device comprises: an evacuation means to form vacuum atmosphere inside the vacuum deposition device; first and second vapor deposition means to heat-evaporate a vapor deposition material, and deposit the material on a material to be deposited; a control means to perform control so that one vapor deposition means deposits vapor on the material to be deposited, and the other vapor deposition means heats the vapor deposition material preliminarily in the meantime; and a vapor deposition restriction means which is arranged so as to divide the first and second vapor deposition means, and restricts the movement of a gas relatively to the material to be deposited, where the gas is generated by the vapor deposition means which performs the preliminary heating. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003293125(A) 申请公布日期 2003.10.15
申请号 JP20020097490 申请日期 2002.03.29
申请人 NIDEK CO LTD 发明人 KAWAI TOKUYOSHI;MIYABU KAZUHITO
分类号 C23C14/24;C23C14/02;C23C14/50;C23C14/56;(IPC1-7):C23C14/24 主分类号 C23C14/24
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