| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a compound semiconductor single crystal wherein the temperature can be grasped more accurately and it is easy to control the temperature uniformly. SOLUTION: When manufacturing the compound semiconductor single crystal by heating with a heater 13 placed around a crucible vessel 11, thermal conduction to the crucible vessel 11 is controlled by providing a uniformly heating member 13 between the crucible vessel 11 and the heater 13. The uniformly heating member 12 may be rotated. The uniformly heating member 13 makes exothermic unevenness even and can heat the surroundings of the crucible vessel 11 uniformly. Further, the temperature can be controlled by grasping accurately the temperature of a seeding part, or the like. COPYRIGHT: (C)2004,JPO
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