CARBON NANOTUBE, CARBON NANOTUBE FILM, SILICON CARBIDE SUBSTRATE INCLUDING CARBON NANOTUBE, CARBON NANOTUBE FILM BODY, AND METHOD FOR PRODUCTION THEM

摘要

PROBLEM TO BE SOLVED: To provide a carbon nanotube generated and grown not only from the C-face of silicon carbide but also from its Si-face and a production method therefor; and a carbon nanotube film in which numerous nanotubes are generated and grown not only from the C-face of silicon carbide but from its Si-face and are highly oriented in a prescribed direction, a substrate including the carbon nanotube film, a carbon nanotube film body and their mass production methods. SOLUTION: This carbon nanotube is obtained by chemically treating the surface of silicon carbide, removing silicon atoms from the treated silicon carbide by heating it in an atmosphere including a slight amount of oxygen at a temperature at which silicon atoms are removed from the surface of the silicon carbide by its decomposition, and generating and growing the carbon nanotube from the surface of silicon carbide to its inside. COPYRIGHT: (C)2004,JPO