Semiconductor device and production process thereof

摘要

In the production of a semiconductor devices, a surface of the portion (A) corresponding to the chip packaging area of the glass substrate (11) is treated with plasma in a vacuum. A silicon chip (12) is directly bonded through a Coulomb's force generated between radicals of atoms constituting the chip (12) and reactive radicals on the surface of the substrate (11). The substrate (11) includes a wiring pattern (15) having a predetermined configuration and formed in such a manner that a conductor (14) exposed on the glass substrate (11) is connected with an electrode of the silicon chip (12).