| 摘要 |
PURPOSE:To improve the characteristics of ohmic contact to a large extent and to prevent deterioration thereof, by forming an amorphous film, whose main component is silicon, on a substrate, forming a metal layer comprising any of W, Mo, Ni, Cr or NiCr on the amorphous film, and performing heat treatment at a specified temperature or less. CONSTITUTION:An N-type a-Si film is deposited on a single crystal Si substrate, whose surface is thermally oxidized. The film is chemically etched selectively, and an island shaped a-Si film region is formed. A silicon nitride film (SiN film) is deposited at a substrate temperature of 200 deg.C by a plasma CVD method, and a contact hole is provided. A metal, which is used as an electrode, is evaporated thereon, and a contact pattern is formed. The device is put into an electric furnace having a vacuum device, and heat treatment is performed. The sheet resistance is changed when the heat treatment temperature is changed. When NiCr, W, Mo, Ni or Cr is used for the electrode of the a-Si film, the resistance of the contact part continues to decrease down to the substrate temperature at the time of the deposition of the a-Si film, and ohmic property is improved. |
