发明名称 FORMING METHOD FOR COATING FILM
摘要 PURPOSE:To make mass production and the formation of a uniform coating film possible, by decomposing silicide gas or germanium compound gas by applying an inactive gas or hydrogen, and forming the film on a surface to be formed. CONSTITUTION:In an reaction system wherein a reduced pressure state lower than 1 atm is kept, an inactive gas or hydrogen is chemically activated or decomposed by induction energy at a position separated from a surface to be formed in the forward direction. After that, silicide gas or germanium composed gas which is not chemically activated is introduced into the above mentioned gas, and is decomposed by a chemically activated or decomposed inactive gas or hydrogen to form silicide or germanium compound on a surface to be formed. It is enabled to form uniformly a coating film on the surface to be formed. thereby.
申请公布号 JPS62169324(A) 申请公布日期 1987.07.25
申请号 JP19860310494 申请日期 1986.12.24
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 H01L31/04;H01L21/205;H01L21/314 主分类号 H01L31/04
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