SPUTTERING TARGET MATERIAL, AND VAPOR DEPOSITION MATERIAL AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a tungsten-oxide sputtering-target material and a vapor- deposition material with which the occurrence of dust (particle) and abnormal electric discharge can be decreased and a high-quality tungsten-carbide film can be stably deposited by a sputtering method or an electron beam evaporation method, and also to provide a manufacturing method for the vapor-deposition material.

SOLUTION: Bismuth in an amount of 0.025 to 1.5 mass% expressed in terms of bismuth oxide is incorporated into tungsten oxide, and baking is carried out in the atmosphere so that ≥6 g/cm3density is reached.

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