| 摘要 |
An active photonic semiconductor device, such as a laser, optical amplifier or LED, is monolithically integrated with a photodetector. The device includes an optically active region formed on a substrate including a first electrical contact 21, for initiating emission of photons within the optically active region. An optical confinement structure (18, figure 1) generally defines a principal optical path through the device and through said optically active region. A photodetector structure 20, formed on the substrate includes a second electrical contact 22 displaced from and substantially electrically insulated from the first contact, overlying a part of the principal optical path, for receiving carriers generated by said emitted photons. A method of determining a degree of bandgap shift between a first region and a second region of semiconductor material by forming a photonic device on a substrate is also disclosed. The photodetector is preferably positioned to cover an intermixed / non-intermixed region close to a facet of the device and also close to the active region of the device. The photodetector may be weakly coupled to the optical confinement structure such that a very small proportion of the optical radiation can be monitored without deleteriously affecting the performance of the device. The intermixed regions 12,15 may define non-absorbing mirrors (NAMs). |
