| 摘要 |
PURPOSE:To eliminate the generation of grain boundaries, subgrain boundaries, and crystal defects by forming a layer having a different heat conductivity from that of a polysilicon layer which is to be recrystallized in parallel to a laser scanning direction partly between a device forming region and a nonforming region. CONSTITUTION:An oxide film 108 (a buffer layer) as a low heat conductivity layer separates a device region 103 from a nondevice region 107. Then, the oxide film 108 exists in parallel to a laser scanning direction, which causes heat conduction in laser scanning direction through the polysilicon layers 103 and 107 and its temperature distribution becomes smooth. As a result, the generation of grain boundaries and sub-grain boundaries, and crystal defects are prevented.
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