| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a copolymer to be used in a photoresist composition for lithography, particularly a chemical amplification photoresist. <P>SOLUTION: The copolymer is preferably substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength shorter than 250 nm, including 157 nm, 193 nm and 248 nm radiation and has improved sensitivity and resolution. In one embodiment, the copolymer is composed of an α-cyano or an α-trifluoro-methacrylate monomer unit and a vinyl ether monomer unit. A lithographic photoresist composition containing the fluorinated copolymer is also provided, as is a process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like. <P>COPYRIGHT: (C)2004,JPO |
