发明名称 METHOD AND DEVICE FOR MEASUREMENT OF PATTERN FILM THICKNESS IN SEMICONDUCTOR MANUFACTURING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for easily measuring film thickness of a miniaturized repetitive thin film pattern by using X-ray fluorescence measurement. SOLUTION: This method is for using X-ray fluorescence to measure film thickness of a pattern structure section. However, an excitation X-ray 1 used as a probe should be of its beam diameter larger than the pattern dimension of the measuring object so that its irradiation range includes a number of repetitive patterns. Also, the plane directional dimension of the pattern should be used when converting the detected X-ray dosage into the film thickness. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003294431(A) 申请公布日期 2003.10.15
申请号 JP20020101309 申请日期 2002.04.03
申请人 SEIKO INSTRUMENTS INC 发明人 SASAYAMA NORIO;HASEGAWA KIYOSHI
分类号 G01B15/02;G01N23/223;H01L21/66;(IPC1-7):G01B15/02 主分类号 G01B15/02
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