发明名称 HIGH-POWER SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a device which is free from the leakage of a liquid and whose heat- radiating efficiency does not deteriorate with aging by a method wherein a semiconductor device is accomodated in a device installation chamber of a heat-radiating case, the chamber is filled with a liquid with good heat-conductivity and the opening of the chamber is sealed by a means capable of expansion and contraction. CONSTITUTION:The heat at a semiconductor device 13 is radiated from a heat-radiating metal case 11 through a heat sink 14 and an insulating plate 15. In addition, the heat is radiated from the surfaces of the device, the heat sink and the insulating plate to a liquid 16 filled in a device installation chamber 12. The increase in the volume of the liquid 16 due to the rise in temperature is absorbed by the deformation of Si gel 23 at the opening so that the leakage of the liquid can be prevented. The Si gel 23 adheres closely to the case 11, and keeps a constant sealing effect surely at a stepped part 251. As a result, the liquid 16 does not overflow and the entrance of water can be prevented surely. Only the chip 13 which generates much heat is filled with the liquid 16, and no liquid enters a thick-film substrate 20 which generates less heat. As a result, the heat of the chip is hardly conducted to the substrate 20, and the deterioration of the characteristic of the substrate 20 due to heat can be prevented effectively. It is possible, therefore, to obtain a device of high reliability.
申请公布号 JPS6396945(A) 申请公布日期 1988.04.27
申请号 JP19860243523 申请日期 1986.10.14
申请人 NIPPON DENSO CO LTD 发明人 YAMAGUCHI TOSHIYUKI
分类号 H01L23/44;H01L23/42 主分类号 H01L23/44
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