METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve step coverage by forming a passivation layer on a metal silicide layer. CONSTITUTION: An insulating layer(12) is formed on a semiconductor substrate(11). A polysilicon layer(13) and a metal silicide layer(14) are sequentially formed on the insulating layer. By performing RTP(Rapid Thermal Processing) under nitrogen atmosphere, a passivation layer including a metal nitride layer(15) and a silicon nitride layer(16) is formed on the metal silicide layer.