| 发明名称 |
Semiconductor device |
| 摘要 |
A field-effect transistor including a gate electrode, silicon layers, and source and drain regions at a surface of a silicon substrate. Sidewall insulating films on the opposite side surfaces of the gate electrode are located between the gate electrode and the silicon layers and contain respective voids.</PTEXT>
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| 申请公布号 |
US6633070(B2) |
申请公布日期 |
2003.10.14 |
| 申请号 |
US20010953960 |
申请日期 |
2001.09.18 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MIURA NARUHISA;OISHI TOSHIYUKI;ABE YUJI;SUGIHARA KOHEI |
| 分类号 |
H01L21/225;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/225 |
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