发明名称 |
Process for producing an epitaxial layer of gallium nitride by the HVPE method |
摘要 |
A process for producing an epitaxial layer of gallium nitride (GaN) by hydride vapor-phase epitaxy (HVPE), as well as to the epitaxial layers which can be obtained by this process are provided. Such a process makes it possible to avoid parasitic GaN deposition on the walls of the reactor.</PTEXT>
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申请公布号 |
US6632725(B2) |
申请公布日期 |
2003.10.14 |
申请号 |
US20010893752 |
申请日期 |
2001.06.29 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS);UNIVERSITE BLAISE PASCAL |
发明人 |
TRASSOUDAINE AGNES;CADORET ROBERT;AUJOL ERIC |
分类号 |
C30B25/10;(IPC1-7):H01L21/20 |
主分类号 |
C30B25/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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