| 摘要 |
A resist pattern forming method of forming a pattern on a resist film formed on a wafer by using a projection exposure apparatus generates a resized pattern of an active area and its inverted pattern, then generates a logical product pattern of a gate pattern to be exposed and the resized pattern, generates a first mask having a logical sum pattern of the inverted pattern and the logical product pattern as a light shielding film, generates a second mask having a logical sum pattern of the resized pattern and the gate pattern as a light shielding film, exposes the resist film on the wafer using the first mask under a condition that an numerical aperture of the projection exposure apparatus is small, and then exposes the resist film on the wafer using the second mask under a condition that the numerical aperture of the projection exposure apparatus is large.</PTEXT>
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