发明名称 |
Method for manufacturing silicon oxide film, method for manufacturing semiconductor device, semiconductor device, display device and infrared light irradiating device |
摘要 |
The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured.</PTEXT>
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申请公布号 |
US6632749(B2) |
申请公布日期 |
2003.10.14 |
申请号 |
US20020133748 |
申请日期 |
2002.04.29 |
申请人 |
SEIKO EPSON CORPORATION;MITSUBISHI DENKI KABUSHIKI KAISYA |
发明人 |
MIYASAKA MITSUTOSHI;SAKAMOTO TAKAO |
分类号 |
C23C14/10;C23C14/58;C23C16/40;C23C16/56;H01L21/316;H01L29/49;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C14/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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