| 摘要 |
PROBLEM TO BE SOLVED: To form a fine particle structure suitable for a photonic crystal by forming a fine particle structure with a high quality on a relatively wide range in a controllable plane direction. SOLUTION: After a spherical fine particle is deposited on portions formed by linearly removing a film formed on a Si wafer 101, the film is entirely removed to form a linearly arranged fine particle pattern 109 in which the fine particle is arranged linearly. A fine particle 107 is deposited by a pulling method using the linearly arranged fine particle pattern as the starting point of the growth to form a film 110 of the fine particle structure. COPYRIGHT: (C)2004,JPO
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