| 摘要 |
<p>A chloride gas of In or Ga (group III elements) and a hydride gas of a group V element are alternately supplied to a growing chamber to grow a group III-V compound semiconductor crystal (19) on a Si substrate (14). As a result, the crystal has a good selective growth property and is of good quality. The growth may be achieved by rotating the substrate (14) to face alternately a chloride gas growing chamber (11), with a port (1) for supplying HCL and a boat (12) for the In or Ga and a hydride gas growing chamber (13) with a port (2) for introducing a gaseous hydride of the group V element.</p> |
