发明名称 Optical monitoring in a two-step chemical mechanical polishing process
摘要 An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.</PTEXT>
申请公布号 US6632124(B2) 申请公布日期 2003.10.14
申请号 US20030339959 申请日期 2003.01.10
申请人 APPLIED MATERIALS INC. 发明人 ADAMS BRET W.;SWEDEK BOGUSLAW A.;BAJAJ RAJEEV;NANJANGUD SAVITHA;WISWESSER ANDREAS NORBERT;TSAI STAN D.;CHAN DAVID A.;REDEKER FRED C.;BIRANG MANOOCHER
分类号 B24B37/04;B24B49/04;B24B49/12;H01L21/306;(IPC1-7):B24B1/00 主分类号 B24B37/04
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