Laser thermal annealing of high-k gate oxide layers

摘要

A method of manufacturing a semiconductor device, comprising the steps of:(a) providing a semiconductor substrate having a surface;(b) forming a gate oxide layer on at least a portion of the surface and including an interface therewith, the gate oxide layer comprising a high-k dielectric oxide including a plurality of interface traps at the interface;(c) forming a gate electrode layer on at least a portion of the gate oxide layer; and(d) laser thermal annealing the high-k gate oxide layer to de-activate the interface traps without incurring formation of a low-k dielectric oxide layer at the interface.