| 摘要 |
PURPOSE:To improve the degree of integration of a switching regulator, by using an n-channel MOS transistor as a switching transistor and respectively applying a supply voltage obtained from one power supply circuit and a bootstrap voltage boosted by means of a bootstrap circuit to the drain and gate of the transistor respectively. CONSTITUTION:A pulse-like control signal is supplied to an n-channel MOS transistor M1 and, at the same time, a supply voltage obtained from one power source is applied across the drain of the transistor M1. Then a voltage boosted by means of a bootstrap circuit 2 is applied to the gate of the transistor M1 so as to make the gate voltage higher than the drain voltage. Therefore, the n-channel MOS transistor M1 can be allowed to execute switching operations by means of one power source. Accordingly, the degree of integration can be improved when this regulator is constituted of an IC and, in addition, a simple power supply circuit can be used. |
