| 摘要 |
PURPOSE:To improve the characteristics of a film, by using an amorphous layer including three elements of silicon, carbon and germanium at specified ratio as an I layer of a PIN type amorphous solar cell, thereby reducing the decrease in transducing efficiency in irradiation of light, and alleviating the strain of a crystal lattice. CONSTITUTION:The ratio of atoms in an amorphous film constituting an I-type layer, which includes three elements of silicon, carbon and germanium, is made to be in the following range with respect to the total number of the atoms: 40-95% for silicon; 0.01-10% for carbon; and 0.01-60% for germanium. A glass substrate 2 having a transparent conductor film 1 is set in one chamber of a separated multiple-chamber type CVD apparatus. SiH4 gas and B2H6 gas are introduced, and plasma discharge is carried out. Thus, a P-type amorphous silicon film 3 is formed. The substrate is moved into another chamber. SiH4 gas, CH4 gas and GeH4 gas, and sometimes H2 gas, are introduced, and plasma discharge is carried out. Thus, an amorphous film 4 as the I layer is formed. Thereafter, the substrate is moved into the other chamber. SiH4 gas and PH3 gas are introduced, and plasma discharge is carried out. Then an N-type amorphous silicon film 5 is formed. |
