发明名称 Method of selectively alloying interconnect regions by ion implantation
摘要 A metal interconnect structure and method of making the same implants ions of an alloy elements into a copper line through a via. Then ion implantation of the alloy elements in the copper line through the via provides improved electromigration properties at the copper line at a critical electromigration failure site, without attempting to provide alloy elements throughout the entire copper line.</PTEXT>
申请公布号 US6633085(B1) 申请公布日期 2003.10.14
申请号 US20010884100 申请日期 2001.06.20
申请人 ADVANCED MICRO DEVICES, INC. 发明人 BESSER PAUL R.;ZHAO LARRY;WU DONGGANG DAVID
分类号 H01L21/768;H01L23/532;(IPC1-7):H01L23/48 主分类号 H01L21/768
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