发明名称 |
Method of selectively alloying interconnect regions by ion implantation |
摘要 |
A metal interconnect structure and method of making the same implants ions of an alloy elements into a copper line through a via. Then ion implantation of the alloy elements in the copper line through the via provides improved electromigration properties at the copper line at a critical electromigration failure site, without attempting to provide alloy elements throughout the entire copper line.</PTEXT>
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申请公布号 |
US6633085(B1) |
申请公布日期 |
2003.10.14 |
申请号 |
US20010884100 |
申请日期 |
2001.06.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER PAUL R.;ZHAO LARRY;WU DONGGANG DAVID |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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