| 摘要 |
PURPOSE:To form semiconductor crystal regions having different characteristics to at least one part of a single crystal by varying the conditions of manufacture such as a composition ratio, the quantity of an impurity, the kind of the impurity, etc., at a stage when crystal forming treatment is executed to a base body, in which a non-nucleation surface having small nucleation density and the nucleation surface of an amorphous material larger than the non-nucleation surface are adjoined, and the semiconductor single crystal is grown. CONSTITUTION:An silicon nitride layer is deposited onto a base body 1 consisting of SiO2 through a decompression vapor growth method, the silicon nitride layer is patterned, and an approximately square nucleation surface 2 in thickness of approximately 300Angstrom and size of approximately 1-4mum is formed. When the flow rates of each gas of SiH2Cl2, HCl, and H2 are brought to 0.6l/min, 1.0l/min and 100l/min and an n-type doping gas is mixed only by a desired flow rate, an Si nucleus is not shaped onto the exposed surface of the base body 1 under the conditions of a temperature of 960 deg.C and pressure of 150Torr, and an Si single crystal nucleus can be formed only onto the nucleation surface 2, thus manufacturing an n-type conductivity type semiconductor crystal region 3 in desired size into a single crystal. |
