发明名称 System for the plasma treatment of large area substrates
摘要 A plasma system for processing large area substrates. In one embodiment the system includes a plurality of radiofrequency (rf) plasma sources removably attached to the rf transparent windows of a processing chamber. The number and distribution of sources is varied to provide the size and uniformity of the plasma field required to treat the substrate. A plurality of plasma probes, such as Langmuir probes, Faraday cups and optical sensor are positioned within the chamber and in electrical communication with the plasma sources adjust the rf field produced by the individual sources to maintain the desired degree of field uniformity.</PTEXT>
申请公布号 US6632324(B2) 申请公布日期 2003.10.14
申请号 US19970878005 申请日期 1997.06.18
申请人 SILICON GENESIS CORPORATION 发明人 CHAN CHUNG
分类号 H05H1/46;C23C16/50;C23C16/505;H01J37/32;H01L21/205;(IPC1-7):C23C16/00;C23F1/00 主分类号 H05H1/46
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