发明名称 |
Method for forming an interconnect structure using a CVD organic BARC to mitigate via poisoning |
摘要 |
A method for forming a metal interconnect structure in a semiconductor device with the elimination of via poisoning during trench mask formation employs a CVD organic BARC that isolates the low k dielectric film. The CVD organic BARC is deposited over the low k dielectric film and in the via hole. Once the trench mask has been formed on the CVD organic BARC, the CVD organic BARC may be removed in the same process as the photoresist of the trench mask layer. A properly formed trench will have been created since the via poisoning and resist scumming were substantially eliminated by the presence of the CVD organic BARC.</PTEXT>
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申请公布号 |
US6632707(B1) |
申请公布日期 |
2003.10.14 |
申请号 |
US20020058227 |
申请日期 |
2002.01.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG FEI;OKADA LYNNE A.;SUBRAMANIAN RAMKUMAR;KAI JAMES K.;GABRIEL CALVIN T.;YOU LU |
分类号 |
H01L21/768;(IPC1-7):H01L21/44;H01L21/00;H01L21/48;H01L21/50 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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