发明名称 Wire etching device and method
摘要 A device and method for etching a wire to manufacture it into a tip for a scanning probe microscope or the like. The wire etching device generates a voltage signal for determining the level of a wire etching voltage, and applies the etching voltage of the level determined depending on the generated voltage signal to the wire to primarily etch it. The wire etching device measures the amount of etching current generated during the primary etching process and controls the level of the voltage signal according to the measured etching current amount so as to control the level of the etching voltage. Then, the device secondarily etches the wire with the level-controlled voltage signal. Therefore, the wire etching device can manufacture the tip while controlling its curvature radius and aspect ratio and reducing the amount of oxide on its surface. This has the effect of manufacturing the tip precisely according to a scanning purpose of an atomic force microscope or scanning tunneling microscope and a feature of a sample to be measured.</PTEXT>
申请公布号 US6632348(B2) 申请公布日期 2003.10.14
申请号 US20010854553 申请日期 2001.05.15
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 AHN HYO SOK;KIM CHOONG HYUN;KIM DOO IN
分类号 C25F7/00;B23H3/02;C25F1/00;C25F3/00;C25F3/14;G12B21/02;H01J9/02;(IPC1-7):C25F3/02;C25D17/00;C25B15/00 主分类号 C25F7/00
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