| 摘要 |
A semiconductor device having a multilayer interconnection structure, includes a substrate having a metal interconnect layer provided thereon and N number (N being an integer of 2 or greater) of layers of insulating film formed one on top of another on the substrate. Each layer of insulating film has a metal interconnect layer including at least one bonding pad section provided thereon. At least one via hole filled with an electrically conductive material is provided in each of the layers for interconnecting metal interconnect layers. At least one bonding pad connecting hole filled with an electrically conductive material is provided in each of the layers for interconnecting bonding pad sections. The at least one bonding pad connecting hole is no more than twice as large in diameter as a smallest via hole. |
