Method of manufacturing semiconductor device

摘要

An interlayer insulating film and a first via connected to a diffusion layer in a MOS transistor are formed on the diffusion layer. Then, a low dielectric constant film for a first layer copper interconnection, and the first layer copper interconnection connected to the first via are formed. Then, an etching stopper film, an interlayer insulating film, and a low dielectric constant film for a second layer copper interconnection are formed in this order. Then, a via hole is formed in the etching stopper film and the interlayer insulating film, and a groove is formed in the low dielectric constant film for the second layer copper interconnection. A barrier metal layer is then formed. Thereafter, Ar ions are implanted. At the time, the implantation energy is 50 keV, and the dose is 1x10<17 cm<−2. A second via and the second layer copper interconnection are formed, and annealing is performed at a temperature of 400° C.