发明名称 Method of forming photonic crystals using a semiconductor-based fabrication process
摘要 A photonic crystal is formed on a semiconductor substrate using a semiconductor-based fabrication process by forming a number of alternating layers of material that have different dielectric constants. The layers of material are then etched to form a number of spaced-apart stacks of alternating layers of material. An interstack material is then formed between the stacks.</PTEXT>
申请公布号 US6633427(B1) 申请公布日期 2003.10.14
申请号 US20010929661 申请日期 2001.08.14
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 KOSCIELNIAK WACLAW C.
分类号 G02B6/122;(IPC1-7):G02F1/00;H01L21/311;H01L29/06 主分类号 G02B6/122
代理机构 代理人
主权项
地址