发明名称 SEMICONDUCTIVE POLYCRYSTAL DIAMOND
摘要 PROBLEM TO BE SOLVED: To provide super hard semiconductive polycrystal diamond (PCD) material improving cutting property in electrical discharge machining (EDM) and electrical discharge grinding (EDG). SOLUTION: Super hard semiconductive PCD material formed of semiconductive diamond particles having Li, Be and Al doped and/or insulating diamond particles having semiconductive surfaces is provided and a tool taking the material therein and a method for manufacturing the material are provided. The super hard PCD material can be manufactured by sintering a plurality of diamond crystals to transform to contain semiconductive surfaces with using insulating diamond particle raw material layer containing additives. Or, the super hard PCD material can be manufactured by sintering semiconductive diamond particle raw material composed of diamond crystal having Li, Al or Be doped. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003291036(A) 申请公布日期 2003.10.14
申请号 JP20030049011 申请日期 2003.02.26
申请人 SMITH INTERNATL INC 发明人 MIDDLEMISS STEWART
分类号 B23B51/00;B22F3/10;B22F7/06;B23B27/14;B23B27/20;B23P15/28;C04B35/52;C23C24/08;C23C30/00;(IPC1-7):B23P15/28 主分类号 B23B51/00
代理机构 代理人
主权项
地址