发明名称 |
Method of depositing low dielectric constant carbon doped silicon oxide |
摘要 |
A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.</PTEXT>
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申请公布号 |
US6632735(B2) |
申请公布日期 |
2003.10.14 |
申请号 |
US20010924240 |
申请日期 |
2001.08.07 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YAU WAI-FAN;LEE JU-HYUNG;CHOPRA NASREEN GAZALA;HUANG TZU-FANG;CHEUNG DAVID;MOGHADAM FARHAD;LIU KUO-WEI;LU YUNG-CHENG;WILLECKE RALF B.;MATTHEWS PAUL;SUGIARTO DIAN |
分类号 |
C23C16/40;H01L21/316;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/40 |
代理机构 |
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地址 |
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