发明名称 METHOD FOR FORMING INSULATION FILM
摘要 In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
申请公布号 AU2003221023(A1) 申请公布日期 2003.10.13
申请号 AU20030221023 申请日期 2003.03.31
申请人 TOKYO ELECTRON LIMITED 发明人 TAKUYA SUGAWARA;YOSHIHIDE TADA;GENJI NAKAMURA;SHIGENORI OZAKI;TOSHIO NAKANISHI;MASARU SASAKI;SEIJI MATSUYAMA
分类号 F02D41/02;H01L21/3105;H01L21/316;H01L21/318;H01L29/78;(IPC1-7):H01L21/316;H01L21/306 主分类号 F02D41/02
代理机构 代理人
主权项
地址