发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD FOR PROCESSING SUCH A STRUCTURE |
摘要 |
A method for processing a low ohmic contact structure to a buried conductive layer in or below a device layer forming part of a semiconductor component is presented, whereby first a highly doped region within said device layer reaching said buried conductive layer is realised, this being followed by a step of etching a trench through said highly doped region to a final depth which extends at least to the semiconductor substrate underneath said buried conductive layer. In a variant method this trench is first pre- etched until a predetermined depth, before the highly doped region is provided. A semiconductor structure which is realised by these methods is described as well.
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申请公布号 |
CA2425289(A1) |
申请公布日期 |
2003.10.11 |
申请号 |
CA20032425289 |
申请日期 |
2003.04.10 |
申请人 |
AMI SEMICONDUCTOR BELGIUM BVBA |
发明人 |
COLSON, PAUL FRANS MARIE;BOONEN, SYLVIE;TACK, MARNIX ROGER ANNA;DE PESTEL, FREDDY MARCEL YVAN;VILLANUEVA, DAVY FABIEN MICHEL;DE BACKER, EDDY;MOENS, PETER DOMINIQUE WILLEM |
分类号 |
H01L21/74;(IPC1-7):H01L21/02;H01L21/461 |
主分类号 |
H01L21/74 |
代理机构 |
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