发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To make the quantity and the thickness of bond uniform and maintain the constant bonding strength by forming a semi-hardened thermosetting resin layer as bond on a silicon wafer before cutting off and then cutting off and fixing the silicon wafer. CONSTITUTION:A semi-hardened (stage B) thermosetting resin layer 2 is formed on the whole rear of a silicon wafer 1 having a circuit patterned thereon by printing or other methods, the wafer is cut off into pieces of specific sizes, and a cut piece is mounted and bonded by thermocompression on the tab of a lead frame 4. This prevents void from being produced in bonding the cut piece to the lead frame. Since thermosetting resin as bond is formed on the rear of the silicon wafer before cutting off, a bond layer of uniform quantity and thickness in comparison with the conventional methods is formed to prevent insufficient bonding strength and characteristic which reduce the reliability.</p>
申请公布号 JPH01319948(A) 申请公布日期 1989.12.26
申请号 JP19880152708 申请日期 1988.06.21
申请人 NITTO DENKO CORP 发明人 NAKAMURA MASAO;MIYOSHI TAKANORI;TERADA TETSUYA;AIZAWA MIKIO
分类号 H01L21/52;H01L21/301;H01L21/78 主分类号 H01L21/52
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