MULTI BIT FLASH MEMORY HAVING TEMPERATURE COMPENSATION FUNCTION

摘要

PURPOSE: A multi bit flash memory having a temperature compensation function is provided to control threshold voltage distribution optimally and to perform a reliable read operation without regard to temperature variation. CONSTITUTION: According to the semiconductor memory device having memory cells storing a plurality of data, word lines and bit lines are connected to the above memory cells. A circuit(30) supplies a temperature dependent voltage to the above selected word line to read a state of the above memory cell. And a circuit(20) supplies a voltage to the above unselected word lines to read the state of the memory cell. The circuit supplying the temperature dependent voltage comprises a semiconductor device whose resistance varies according to the temperature.