| 摘要 |
PURPOSE:To stabilize a hole-filling process by implanting hydrogen ions into the whole surface of a water in which open windows are formed and then selectively growing W in the above openings. CONSTITUTION:Contact holes, that is, a gate and a source drain 2, 3, are formed in an insulating film 4 on a silicon wafer 5 as a substrate. The whole surface of this wafer 5 is subjected to hydrogen ion implantation and to lamp annealing, by which layers 6 doped thinly with hydrogen atoms are formed on bottoms of the openings, respectively. Subsequently, W 7 is selectively grown on the silicon in the contact holes by a CVD method to fill the contact holes with the W 7. Then, a wiring of Al-Si-Cu, etc., is formed on the above. By this method, stable contact hole filling free from the occurrence of encroachment can be carried out by means of the selective CVD of W. |
