发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can suppress the unevenness of a resistance value of a local wiring in a cell. SOLUTION: The semiconductor integrated circuit device comprises a cell transistor, a bit line (13-1) provided above the transistor, a local wiring (21-1) in the cell provided above the bit line (13-1) and connected to one of source/ drain regions (5) of the transistor, and a magnetoresistance element (18) provided above the bit line (13-1) and connected to the bit line (13-1) and the local wiring (21-1) in the cell. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003289135(A) 申请公布日期 2003.10.10
申请号 JP20020183983 申请日期 2002.06.25
申请人 TOSHIBA CORP 发明人 HOSOYA KEIJI;AMANO MINORU;SAITO YOSHIAKI;ASAO YOSHIAKI;TAKAHASHI SHIGEKI;KISHI TATSUYA;IWATA YOSHIHISA
分类号 H01L27/105;H01L21/768;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01L27/105 主分类号 H01L27/105
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