| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving characteristics of respective semiconductor elements constituting a semiconductor device, and suppressing the fluctuation of characteristics. <P>SOLUTION: A thin film transistor 1 includes a gate electrode 22, a source region 24, a drain region 25, and a channel region 26. The thin film transistor 1 is formed by carrying out crystal growth with a grain filter (recessed part) 112 formed on a substrate as a start point, and by using silicon crystal particles in almost mono-crystal conditions formed in a region 114 with the grain filter 112 as almost a center. The grain filters 112 are selectively formed corresponding to positions where the plurality of thin film transistors 1 are formed, respectively, and the respective thin film transistors 1 are formed by using almost mono-crystal silicon films formed by using the respective grain filters 112. <P>COPYRIGHT: (C)2004,JPO</p> |
