| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which can improve the reliability of characteristics of the element, and to provide a method for manufacturing the same. SOLUTION: The semiconductor element comprises a semiconductor substrate 31, having a channel region and impurity regions at both sides of the channel region, a first polycrystalline silicon layer 35 formed on a surface of the channel region, a gate-insulating film 33 interposed between the layer 35 and the channel region, and formed to surround a periphery of the side face of the layer 35 at an edge, having a width wider than the layer 35 and a thickness larger than that of an inside, a gate electrode containing a metal layer 53 and a second polycrystalline silicon layer 51 surrounding the layer 53 and formed on an upper part of the layer 35, and insulating film spacers 43 formed on both side faces of the gate electrode. COPYRIGHT: (C)2004,JPO
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