发明名称 METHOD AND CIRCUIT FOR REPAIRING NONVOLATILE FERROELECTRIC MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To control redundancy operation according to a user's program setting (encryption) and to make it possible to repair a defect even if the defect occurs during memory testing or after completion of a package. <P>SOLUTION: Fail addresses are stored in a redundancy coding cell of a redundancy coding section composed of a redundancy master cell and a plurality of redundancy cells, and if input addresses satisfy conditions encrypted by a user, a master signal is activated through the redundancy master cell by outputting to the redundancy coding section a set signal, a reset signal, and a first group of control signals. If the input addresses correspond to the fail addresses stored in the redundancy coding cells, a second group of control signals are outputted by performing a logical operation of the master signals, signals are outputted, and then a third group of control signals are outputted for inactivating normal input/output and activating redundancy input/output paths by the operation of a redundancy control section which receives the second group of control signals as its input. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003288793(A) 申请公布日期 2003.10.10
申请号 JP20020380780 申请日期 2002.12.27
申请人 HYNIX SEMICONDUCTOR INC 发明人 KANG HEE BOK
分类号 G06F12/16;G11C11/22;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G06F12/16
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