| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface treatment device and its method by which the entire surface of a substrate to be treated can be treated uniformly and appropriately. SOLUTION: A placing table 2 is provided to hold a semiconductor wafer W as a substrate to be treated in a vacuum chamber 1, and an electron beam irradiation mechanism 6 is provided on the ceiling of the vacuum chamber 1 to produce an electron beam EB. The placing table 2 is vertically and freely movable by means of an elevating device 3, thereby freely setting a distance between the electron beam irradiation mechanism 6 and the semiconductor wafer W. COPYRIGHT: (C)2004,JPO |
