| 摘要 |
PURPOSE:To ensure a sufficient high resistance region and miniaturize a resistor by constructing the resistor nearly in U-shape in cross-section, and providing low resistance regions at the side parts of the U-shape and a high resistance region at the bottom part of the U-shape, and decreasing the spacing between both ends of the resistor. CONSTITUTION:A semiconductor substrate 50, an insulator 51, and a resistor 52 are comprised. The resistor 52 is constructed nearly in U-shape in cross-section, and provided with low resistance regions 52a at the side parts of the U-shape and a high resistance region 52b at the bottom part of the U-shape. In particular, the high resistance region 52b is formed at a position deeper than both ends of the low resistance regions of 52a, and both ends of the low resistance regions 52a are on the same plane nearly parallel to the plane of the semiconductor substrate 50 and in contact with electrodes 53 on the semiconductor substrate 50. Thus, the high resistance region 52b can sufficiently be ensured, and moreover, the spacing between both ends of the resistor 52 can be made small so that miniaturized construction can be achieved. |
