| 摘要 |
FIELD: SHF radio engineering. SUBSTANCE: invention can be employed as measure of noise temperature in precise noise measurements: low levels of noise temperature of signal sources, low losses, noise parameters of four-terminal networks and built-in tests in radio systems of various assignment. Double-level noise generator has noise radiator with two outputs built on nonreciprocal semiconductor device with Schottky barrier, valve, switch and two loads. First output of noise radiator built on semiconductor device is connected to input of valve which output is output of double-level noise generator, second output of noise radiator built on semiconductor device is connected through switch either to first load or to second load. Double-level noise generator has two stationary conditions with output levels of noise temperature T1≅(0,2...0,5)To and T2≅(1...3)To switched over by command from outside. EFFECT: enhanced operational characteristics of double-level noise generator. 1 dwg |
