SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to be capable of preventing junction leakage when forming a contact hole by uniformly forming a capping layer at the upper portion of a transition metal silicide layer. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate(100) including a gate electrode(106) and a junction region(110) formed at both sides of the gate electrode, a transition metal silicide layer(115) selectively formed at the upper portion of the resultant structure, a capping layer(120) used as an etch stop layer, formed at the upper portion of the transition metal silicide layer, an interlayer dielectric(130) formed on the entire surface of the resultant structure, and a contact plug(140) formed in the interlayer dielectric and the capping layer for partially contacting the transition metal silicide layer.