| 摘要 |
PURPOSE: A semiconductor memory device having a refresh mode is provided to reduce an instant peak current in the refresh mode and at the same time and to prevent the reduction of a refresh operation speed. CONSTITUTION: The semiconductor memory device comprises a number of cell matrices and performs a sequential refresh as to each cell matrix. The first cell matrix performs the refresh operation first in the refresh operation mode. The first bit line sense amplifier power supply driving unit drives a pull-up line of a bit line sense amplifier of the first cell matrix with an over-driving voltage and a core voltage(Vcore) in a normal operation mode and drives it with the core voltage only in the refresh mode, in response to a flag signal indicating the refresh operation mode. The second cell matrix performs the refresh operation later than the first cell matrix in the refresh operation mode. And the second bit line sense amplifier power supply driving unit drives a pull-up line of a bit line sense amplifier of the second cell matrix with the over driving voltage and the core voltage in the normal operation mode and the refresh operation mode without regard to the flag signal.
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