| 摘要 |
<p>There is provided a method and apparatus for forming fine circuit interconnects that can form, by copper plating, copper interconnects in which movement of copper atoms is retarded or suppressed whereby electromigration is prevented. The method for forming fine circuit interconnects, comprising, providing a substrate for electronic circuit having fine circuit patterns which are covered with a barrier layer (4) and optionally a seed layer (5), forming a first plated film (6) on the surface of the substrate by copper alloy plating, and forming a second plated film (7) on the surface of the first plated film by copper plating. <IMAGE> <IMAGE></p> |
