| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for suppressing a surge voltage. <P>SOLUTION: This semiconductor device is interposed between a second conductor member 5 and a third conductor member 6, and a capacitor 14, connected in parallel with the element of an FWD chip 2, is integrally molded with the FWD chip 2 with resin 9. That is, a capacitor 14 is disposed in the neighborhood of the FWD chip 2 which is the generation source of the surge voltage so that the surge voltage generated by the FWD chip 2 can be absorbed by the capacitor 14. Then, the surge voltage generated from the FWD chip 2 can be effectively suppressed, and the radiation quantity of the surge voltage can be reduced, and the misoperation of a peripheral electronic apparatus or the reception failure of a radio can be prevented. <P>COPYRIGHT: (C)2004,JPO |
