| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device can be manufactured by using a laser-beam crystallization method which can prevent the remarkable fall of the mobility of a TFT due to grain boundaries formed in the channel forming region of the TFT, the decrease of an on-current, and the increase of an off-current, and to provide a semiconductor device manufactured by the method. SOLUTION: After a semiconductor film is formed so that the channel width of the film becomes almost equal to each width of crystal grains formed by using a continuously oscillated laser beam in the direction perpendicular to the scanning direction of the laser beam, single crystallinity is obtained in the channel forming region by irradiating the semiconductor film with the laser beam by aligning the moving direction of carriers with the scanning direction of the laser beam. COPYRIGHT: (C)2004,JPO
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